9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Temperature dependence of the capture cross section for the E3 defect in Ir/ZnO Schottky contacts

12 Jul 2012, 11:20
Oral Presentation Track A - Division for Condensed Matter Physics and Materials DCMPM2


Mr Wilbert Mtangi (University of Pretoria)

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Prof F. D. Auret, email: danie.auret@up.ac.za
Institution: University of Pretoria

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Abstract content <br> &nbsp; (Max 300 words)

We report on the temperature dependence of the capture cross-section observed in the E3 defect in Ir/ZnO Schottky contacts. Conventional DLTS measurements reveal an estimated activation enthalpy of 0.30eV. The peak height of the DLTS peaks show a significant dependence on the rate window used. From the temperature dependence of the capture cross-section,a capture barrier energy of 38meV has been calculated. The apparent capture cross-section for the E3 peak has been obtained as 1.0 ×10-14cm2 while the true capture cross-section has been calculated as 7.3×10-12 cm2. Saturation of the E3 defect is observed with a filling pulse of width 200ms. The variation of the peak height with rate window for the E3 peak is due to the temperature dependence of the capture cross-section.

Primary author

Mr Wilbert Mtangi (University of Pretoria)


Prof. F. D Auret (University of Pretoria) Dr J. M Nel (University of Pretoria) Dr M Diale (University of Pretoria) Mr P. J. J Janse van Rensburg (University of Pretoria) Dr W. E Meyer (University of Pretoria)

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