Speaker
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
Level for award<br> (Hons, MSc, <br> PhD)?
PhD
Apply to be<br> consider for a student <br> award (Yes / No)?
Yes
Main supervisor (name and email)<br>and his / her institution
Prof F. D. Auret, email: danie.auret@up.ac.za
Institution: University of Pretoria
Abstract content <br> (Max 300 words)
We report on the temperature dependence of the capture cross-section observed in the E3 defect in Ir/ZnO Schottky contacts. Conventional DLTS measurements reveal an estimated activation enthalpy of 0.30eV. The peak height of the DLTS peaks show a significant dependence on the rate window used. From the temperature dependence of the capture cross-section,a capture barrier energy of 38meV has been calculated. The apparent capture cross-section for the E3 peak has been obtained as 1.0 ×10-14cm2 while the true capture cross-section has been calculated as 7.3×10-12 cm2. Saturation of the E3 defect is observed with a filling pulse of width 200ms. The variation of the peak height with rate window for the E3 peak is due to the temperature dependence of the capture cross-section.