SAIP2012

Temperature dependence of the capture cross section for the E3 defect in Ir/ZnO Schottky contacts

12 Jul 2012, 11:20

20m

Oral Presentation Track A - Division for Condensed Matter Physics and Materials DCMPM2

Speaker

Mr Wilbert Mtangi (University of Pretoria)

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

Yes

Main supervisor (name and email)<br>and his / her institution

Prof F. D. Auret, email: danie.auret@up.ac.za
Institution: University of Pretoria

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

PhD

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

No

Abstract content <br> &nbsp; (Max 300 words)

We report on the temperature dependence of the capture cross-section observed in the E3 defect in Ir/ZnO Schottky contacts. Conventional DLTS measurements reveal an estimated activation enthalpy of 0.30eV. The peak height of the DLTS peaks show a significant dependence on the rate window used. From the temperature dependence of the capture cross-section,a capture barrier energy of 38meV has been calculated. The apparent capture cross-section for the E3 peak has been obtained as 1.0 ×10^-14cm² while the true capture cross-section has been calculated as 7.3×10^-12 cm². Saturation of the E3 defect is observed with a filling pulse of width 200ms. The variation of the peak height with rate window for the E3 peak is due to the temperature dependence of the capture cross-section.

Peer reviewing

Paper

Accepted on 11 Nov 2014 by Johan Janse van Rensburg

507_A_Mtangi.pdf