SAIP2016

High energy electron irradiation influence on the Schottky barrier hieght and the Richardson constant on Pd/ZnO Schottky barrier diodes

5 Jul 2016, 16:10

1h 50m

Kramer Law building

Board: A.303

Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster Session (1)

Speaker

Mr Meehleketo Advice Mayimele (university of Pretoria)

Main supervisor (name and email)<br>and his / her institution

danie.auret@up.ac.za

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

No

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

yes

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

The influence of high energy electron (HEE) irradiation from Sr-90 radio-nuclide on Pd/ZnO samples has been investigated over the temperature range of 80-350 K. Current-voltage (IV), capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) were used characterize the devices before and after irradiation. For both devices, the IV characteristics were well described by thermionic emission (TE) in the high temperatures but deviated from TE theory at low temperatures. The current flowing through the interface at a bias of 2.0 V from pure TE to Thermionic field emission (TFE) within the depletion region with the free carrier concentration of the devices decreases after HEE irradiation. The modified Richardson constants were determine from the Gaussian distribution of the barrier height across the contacts. New defects appeared after HEE irradiation.

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

PhD

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

yes