9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Erbium point defects and complexes in GaN: A G0W0 and hybrid functional study

11 Jul 2012, 11:15
Oral Presentation Track A - Division for Condensed Matter Physics and Materials DCMPM2


Mr Cecil Ouma (Student)

Abstract content <br> &nbsp; (Max 300 words)

We have investigated erbium (Er3+) point defects and defect complexes in GaN a wide band gap semiconductor using; generalized gradient approximation (PBE-GGA), G0W0 quasi-particle approximation and hybrid functional (HSE06). We have paid particular attention to the structure, energetics, and electronic properties of the defects. We found the most stable site for Er3+ to be when the Er3+ is located at a Ga substitutional site but none of the defects possess deep energy levels..

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Main supervisor (name and email)<br>and his / her institution

Dr Walter E Meyer

Primary author

Mr Cecil Ouma (Student)

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