SAIP2012

Erbium point defects and complexes in GaN: A G0W0 and hybrid functional study

11 Jul 2012, 11:15

20m

Oral Presentation Track A - Division for Condensed Matter Physics and Materials DCMPM2

Speaker

Mr Cecil Ouma (Student)

Abstract content <br> &nbsp; (Max 300 words)

We have investigated erbium (Er3+) point defects and defect complexes in GaN a wide band gap semiconductor using; generalized gradient approximation (PBE-GGA), G0W0 quasi-particle approximation and hybrid functional (HSE06). We have paid particular attention to the structure, energetics, and electronic properties of the defects. We found the most stable site for Er3+ to be when the Er3+ is located at a Ga substitutional site but none of the defects possess deep energy levels..

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

Yes

Main supervisor (name and email)<br>and his / her institution

Dr Walter E Meyer
wmeyer@up.ac.za

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

PhD

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

Yes