9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Influence of working atmosphere on Y<sub>3</sub>(Al,Ga)<sub>5</sub>O<sub>12</sub>:Tb thin films grown by PLD technique

10 Jul 2012, 17:30
2h
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session

Speaker

Mr Abdelrhman Mohmmed (University of the Free State- Department of physics)

Main supervisor (name and email)<br>and his / her institution

H.C Swart, swarthc@ufs.ac.za, University of the Free State, Department of physics

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

Yes

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

Yes

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

PhD

Abstract content <br> &nbsp; (Max 300 words)

Y3(Al,Ga)5O12:Tb thin films were grown on Si (100) substrates using the pulsed laser deposition technique. The influence of working atmosphere (base pressure, O2, Ar and N2) on the morphology and structure of the thin films were investigated by Atomic force microscopy (AFM) and X-ray diffraction (XRD) respectively. Auger electron spectroscopy (AES) was employed to analyze the surface chemical composition of the films and the Auger data confirmed the presence of all major elements, namely Yttrium (Y), Aluminum (Al), Gallium (Ga) and Oxygen (O) present in Y3(Al,Ga)5O12:Tb phosphor. The brightest emission was given by the film which was deposited in oxygen atmosphere, which indicated that oxygen is the best working atmosphere for this kind of material. Depth profiles show the change in atomic concentration as well as the thickness of the thin films.

Primary author

Mr Abdelrhman Mohmmed (University of the Free State- Department of physics)

Co-author

Prof. Martin Ntwaeaborwa (University of the Free State)

Presentation Materials

Peer reviewing

Paper