Speaker
Abstract content <br> (Max 300 words)
Y3(Al,Ga)5O12:Tb thin films were grown on Si (100) substrates using the pulsed laser deposition technique. The influence of working atmosphere (base pressure, O2, Ar and N2) on the morphology and structure of the thin films were investigated by Atomic force microscopy (AFM) and X-ray diffraction (XRD) respectively. Auger electron spectroscopy (AES) was employed to analyze the surface chemical composition of the films and the Auger data confirmed the presence of all major elements, namely Yttrium (Y), Aluminum (Al), Gallium (Ga) and Oxygen (O) present in Y3(Al,Ga)5O12:Tb phosphor. The brightest emission was given by the film which was deposited in oxygen atmosphere, which indicated that oxygen is the best working atmosphere for this kind of material. Depth profiles show the change in atomic concentration as well as the thickness of the thin films.
Level for award<br> (Hons, MSc, <br> PhD)?
PhD
Apply to be<br> consider for a student <br> award (Yes / No)?
Yes
Main supervisor (name and email)<br>and his / her institution
H.C Swart, swarthc@ufs.ac.za, University of the Free State, Department of physics
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
