9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Extracting device parameters of pn-junction diodes using sigmoidal properties of resistance – voltage curves: theory, simulation and application

12 Jul 2012, 08:20
Oral Presentation Track A - Division for Condensed Matter Physics and Materials DCMPM1


Ms Pesi Hangoma (Univeristy of Zambia)

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Main supervisor (name and email)<br>and his / her institution

Mr. Nchimunya Mwiinga

Abstract content <br> &nbsp; (Max 300 words)

Current-voltage (I-V) curves of pn-junction diodes obtained at a known temperature T are often characterised using the non-ideal diode model of diodes having an ideality factor k, reverse saturation current Io, series resistance Rs and shunt resistance Rsh. The graph of diode resistance R against bias potential V is sigmoidal with a singularity at V=0 so that diode resistance at V=0 is obtained only as a limit for V approaching 0. The Lambert W function is used to obtained analytic expressions forI, V and R. An injective logarithmic mapping function is then used to transform the analytic expression for R to avoid the singularity at V=0. The resulting injective multidimensional expression for R is finally optimised to fit experimentally determined resistance values for germanium curves, using the Levenberg-Marquardt method.

Primary author

Ms Pesi Hangoma (Univeristy of Zambia)


Mr Nchimunya Mwiinga (University of Zambia) Dr Patrick Sibanda (University of Zambia)

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