SAIP2016

Growth and characterization of RuO₂ thin films nanostructures

5 Jul 2016, 16:10

1h 50m

Kramer Law building

Board: A.469

Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster Session (1)

Speaker

Ms Nelisiwe Chonco (University of Zululand)

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

PhD

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

No

Main supervisor (name and email)<br>and his / her institution

ndwandweo@unizulu.ac.za

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

no

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

yes

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

RuO₂ thin films were deposited from 99.999% of ruthenium target on p-type silicon substrate and also on glass substrates. Substrates were used to study other physical properties of the deposited films. Thin films of ruthenium oxide were grown by direct current (DC) unbalanced magnetron sputtering methods in argon atmosphere at a rate of 6-10sccm and oxygen rate of 2-6sccm, with varying power starting from 100W- 200W. The physical and electrical properties of RuO₂ thin films were investigated by using XRD,SEM,RBS and AFM.
Keywords: RuO₂, nanostructures, temperature, sputtering