4-8 July 2016
Kramer Law building
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=10&confId=86">The Proceedings of SAIP2016</a> published on 24 December 2017

Effects of doping ratio on structural, luminescence and transmittance properties of Ga–Doped ZnO nanoparticles by precipitation reflux method

5 Jul 2016, 16:10
1h 50m
Kramer Law building

Kramer Law building

UCT Middle Campus Cape Town
Board: A.382
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster Session (1)

Speaker

Mr Jatani Ungula (University of the Free State)

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

Yes

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

Yes

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

Yes

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

Key words: Semiconductor, Gallium, ZnO, DSSCs

Ga-doped ZnO (ZnO:Ga) nanoparticles were synthesized by precipitation reflux method. The effects of varying [Ga]/[Zn] doping ratios on the morphology, luminescence and optical properties of ZnO:Ga were investigated. Ga-doped ZnO transparent conducting materials have gained much interest in recent years due to their low resistivity, high transmittance, nontoxicity and resource availability [1]. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed for the nanoparticles. It was found that SEM images increased in size by increasing the [Ga]/[Zn] ratio up to 2 mol.% then reduced in size at higher doping ratios (3-5 mol.%). The diffraction patterns showed hexagonal wurtzite structure of ZnO. The crystallinity and crystallite sizes increased by increasing doping ratios to 2 mol. %, but decreased as doping ratios increased to 5%. The total reflectance spectra of ZnO:Ga samples are similar and show reflectance of 9–14% in the spectral region of 350 –700 nm. The % transmittance of ZnO:Ga in the UV region, was observed to increase with doping levels then reduce at higher % doping. Similarly, the highest excitonic peak emissions were seen at 2% [Ga]/[Zn] ratio from the PL spectra.

Reference: [1] M. Netrvalova, I. Novotny, L. Prusakova, V. Tvarozek, and P. Sutta, “Influence of deposition regime on physical properties of gallium-doped zinc oxide films,” Vacuum, vol. 86, no. 6, pp. 707–710, 2012.

Main supervisor (name and email)<br>and his / her institution

Francis B Dejene

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

PhD

Primary author

Mr Jatani Ungula (University of the Free State)

Co-authors

Prof. Francis B Dejene (University of the Free State) Prof. Henrik Swart (University of the Free State)

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Peer reviewing

Paper