Speaker
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
Yes
Main supervisor (name and email)<br>and his / her institution
Walter.E Meyer wmeyer@up.ac.zaYes
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
The electronic and thermal properties of defects introduced during electron beam deposition (EBD) and isochronal annealing of titanium (Ti) contacts on epitaxial p-Si were investigated. In this work, Ti Schottky contacts were annealed with in a temperature range of 50 °C-400 °C. Current-voltage (I-V) measurements were conducted to monitor the change in electrical characteristics with every annealing step. A barrier height of 0.57 eV was measured on the as-deposited sample. Deep level transient spectroscopy (DLTS) and Laplace-DLTS techniques were employed to identify the defects induced after electron beam deposition (EBD) and isochronal annealing of the Ti Schottky contacts. The defect level identified on the as-deposited sample was a hole trap at 0.35 eV, known as the K-centre.
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
