SAIP2016

Structural and electrical properties of ruthenium thin films on 6H-SiC annealed in the air

6 Jul 2016, 16:10

1h 50m

Kramer Law building

Board: F.013

Poster Presentation Track F - Applied Physics Poster Session (2)

Speaker

Dr Kinnock Vundawaka Munthali (University of Pretoria and University of Namibia)

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

Ruthenium (Ru) Schottky contacts and thin films on n-type 6H-SiC were fabricated and characterised by physical and electrical methods. The characterisation was done after annealing the samples in air at various temperatures. Rutherford backscattering spectroscopy (RBS) analysis of the thin films indicated the oxidation of Ru, after annealing at a temperature of 400 oC , and interdiffusion of Ru and Si at the Ru-6H-SiC interface at 500 C. XRD analysis of the thin films indicated the formation of RuO2 and RuSi in Ru-6H-SiC after annealing at a temperature of 600 C. The formation of the oxide was also corroborated by Raman spectroscopy.The ideality factor of the Schottky barrier diodes (SBD) was seen to generally decrease with annealing temperature. The series resistance increaseed astronomically after annealing at 700 C which was an indication that the SBD had broken down. The failure mechanism of the SBD is attributed to deep inter-diffusions of Ru and Si at the Ru-6H-SiC interface as evidenced from the RBS of the thin films.

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

Yes

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

No

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

N/A

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

No

Main supervisor (name and email)<br>and his / her institution

Prof Chris Theron, chris.theron@up.ac.za