Speaker
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
Yes
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
Ph.D
Main supervisor (name and email)<br>and his / her institution
Prof. P.A. Selyshchev; selyshchev@gmail.com; University of Pretoria
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
A radiation-induced defect generation approach is developed that describes the formation of a thin-film of an AB compound layer under the influence of radiation-induced interstitial. The A and B immiscible layers are irradiated with a beam of energetic particles and this process leads to the displacement of lattice atoms in both layers by energetic particles. A number of surface lattice atoms in A and B layers moves into interstitial sites and thereby become A and B interstitial atoms. The interstitial atoms diffuse via interstitial mechanisms to the reaction interfaces A/AB and AB/B. The AB compound layer formation occurs as a result of chemical transformation between the diffusing interstitial atoms and surface lattice species at reaction interfaces. This chemical reaction takes place under a diffusion limited process due to the dependence of reaction rate on both interstitial and surface lattice species’ densities. The approach described here reveals radiation- induced interstitial (a radiation enhanced diffusion type) as the dominant diffusion mechanism during the formation of a thin-film of an AB-compound layer. This process takes place at a temperature lower than AB compound layer formation under non-radiation process using cobalt silicide and tungsten disilicide as a case study. This approach is in good agreement with experiment.
