9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Diblock copolymers as templates for semiconductor nanostructure fabrication

10 Jul 2012, 17:30
2h
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session

Speaker

Mr Stephen Dobson (Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031, South Africa)

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

Yes

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

Hons

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

No

Main supervisor (name and email)<br>and his / her institution

Prof J R, Botha(Reinhardt.Botha@nmmu.ac.za; Department of Physics,Nelson Mandela Metropolitan University, Port Elizabeth

Abstract content <br> &nbsp; (Max 300 words)

The self assembly of diblock copolymers (DbC) has received much attention due to its potential for producing nanostructure fabrication masks with features on a scale less than 22 nm [1]. This allows for the fabrication of semiconductor nanostructures beyond what is currently possible.
The precise and repeatable control of these DbC nanostructure masks is a great challenge due to the many variables involved in creating the required morphologies. In this paper the conditions required to obtain perpendicular orientated lamellae in a thin film of the diblock copolymer polystyrene-b-poly(methyl-methacrylate) (PS-b-PMMA) on a Si substrate, using a solvent evaporation technique, have been investigated. It is demonstrated that with the correct film thickness on a deoxidized Si substrate and appropriate annealing conditions in vacuum, perpendicular lamella can be produced in the thin film. However the uniformity across the substrate (±1cm2) is unsatisfactory, with differing morphologies present. Experiments on the neutralization of the silicon surface using a random (r) diblock copolymer of the same constituent monomers, i.e. PS-r-PMMA, and the use of multiple spin coatings, in order to improve the morphology of the diblock film will also be reported.

[1] A. Andreozzi, E. Poliani, G. Seguini, M. Perego, Nanotechnology 22 (2011) 185304

Primary author

Mr Stephen Dobson (Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031, South Africa)

Co-authors

Prof. J.H. Neethling (Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031, South Africa) Prof. J.R. Botha (Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031, South Africa) Mr Z.N. Urgessa (Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031, South Africa)

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