Speaker
Apply to be<br> consider for a student <br> award (Yes / No)?
Yes
Level for award<br> (Hons, MSc, <br> PhD)?
Hons
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
Main supervisor (name and email)<br>and his / her institution
Prof J R, Botha(Reinhardt.Botha@nmmu.ac.za; Department of Physics,Nelson Mandela Metropolitan University, Port Elizabeth
Abstract content <br> (Max 300 words)
The self assembly of diblock copolymers (DbC) has received much attention due to its potential for producing nanostructure fabrication masks with features on a scale less than 22 nm [1]. This allows for the fabrication of semiconductor nanostructures beyond what is currently possible.
The precise and repeatable control of these DbC nanostructure masks is a great challenge due to the many variables involved in creating the required morphologies. In this paper the conditions required to obtain perpendicular orientated lamellae in a thin film of the diblock copolymer polystyrene-b-poly(methyl-methacrylate) (PS-b-PMMA) on a Si substrate, using a solvent evaporation technique, have been investigated. It is demonstrated that with the correct film thickness on a deoxidized Si substrate and appropriate annealing conditions in vacuum, perpendicular lamella can be produced in the thin film. However the uniformity across the substrate (±1cm2) is unsatisfactory, with differing morphologies present. Experiments on the neutralization of the silicon surface using a random (r) diblock copolymer of the same constituent monomers, i.e. PS-r-PMMA, and the use of multiple spin coatings, in order to improve the morphology of the diblock film will also be reported.
[1] A. Andreozzi, E. Poliani, G. Seguini, M. Perego, Nanotechnology 22 (2011) 185304