9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Defect complexes on SiC surfaces

10 Jul 2012, 17:30
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session


Ms Eva Khoza (University of Pretoria)

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Abstract content <br> &nbsp; (Max 300 words)

SiC is a technologically important material because of its hardness and semi-conducting properties. SiC surfaces are important, for example, as a substrate in the growth of graphene. The epitaxial growth of SiC is important and here the structure of SiC surfaces are relevant. In our work, we study surfaces of SiC using first principles total energy methods. We consider surfaces of the cubic and hexagonal forms of SiC, both Si-terminated and C-terminated. Our primary focus is adatoms and vacancies on these surfaces. We have shown the effect of surface geometry on these defect complexes with the view of determining low energy configurations.

Main supervisor (name and email)<br>and his / her institution

Prof Nithaya Chetty, nithaya.chetty@up.ac.za, University Of Pretoria

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Primary author

Ms Eva Khoza (University of Pretoria)


Prof. Nithaya Chetty (University of Pretoria)

Presentation Materials

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