9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

DLTS and I-V-T characteristicsof e-beam deposited Pd/W 4H-SiC Schottky contacts

12 Jul 2012, 17:30
2h
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session

Speaker

Mr Alexander Paradzah (UNIVERSITY OF PRETORIA)

Abstract content <br> &nbsp; (Max 300 words)

DLTS investigations of 4H-SiC homo-epitaxial layers of doping density ~ (1014 – 1016) cm-3 reveal the presence of two peaks below the conduction band, EC, which we attribute to the e-beam metallization damage: at (EC – 0.160) eV and at (EC – 0.121) eV. These peaks were, however, not observed in 1016 cm-3 material. In addition, the well-known peaks at (EC – 0.096) eV and at (EC – 0.607) eV were present in all our samples in the doping range investigated. We observed departure from thermionic-emission (TE) theory in the I–V–T characteristics in the temperature range 30 K ≤ T ≤ 340 K, confirming the surface damage and indicative of an inhomogenous Schottky barrier at the W/SiC interface. Both the Schottky barrier height (фBO) and the diode ideality factor (n) exhibited anomalous behaviour: typically in 1016 cm-3 doped SiC, 1.50 eV ≤ фBO ≤ 0.89 eV and 1.10 ≤ n ≤ 4.60 were observed, respectively, with decreasing measurement temperature. The inhomogenous Schottky barrier was satisfactorily described by a Gaussian distribution with mean фBO = 1.30 eV and standard deviation σ0 = 0.002 eV. Current conduction was predominantly TE for T > 100 K and was increasingly of a thermionic-field-emission (TFE) character for T < 100 K.

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

Yes

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

Yes

Main supervisor (name and email)<br>and his / her institution

F D AURET, danie.auret@up.ac.za, University of Pretoria

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

MSc

Primary author

Mr Alexander Paradzah (UNIVERSITY OF PRETORIA)

Co-authors

Mr Legodi Matshisa (UNIVERSITY OF PRETORIA) Dr Walter Meyer (UNIVERSITY OF PRETORIA)

Presentation Materials

Peer reviewing

Paper