Abstract content <br> (Max 300 words)
DLTS investigations of 4H-SiC homo-epitaxial layers of doping density ~ (1014 – 1016) cm-3 reveal the presence of two peaks below the conduction band, EC, which we attribute to the e-beam metallization damage: at (EC – 0.160) eV and at (EC – 0.121) eV. These peaks were, however, not observed in 1016 cm-3 material. In addition, the well-known peaks at (EC – 0.096) eV and at (EC – 0.607) eV were present in all our samples in the doping range investigated. We observed departure from thermionic-emission (TE) theory in the I–V–T characteristics in the temperature range 30 K ≤ T ≤ 340 K, confirming the surface damage and indicative of an inhomogenous Schottky barrier at the W/SiC interface. Both the Schottky barrier height (фBO) and the diode ideality factor (n) exhibited anomalous behaviour: typically in 1016 cm-3 doped SiC, 1.50 eV ≤ фBO ≤ 0.89 eV and 1.10 ≤ n ≤ 4.60 were observed, respectively, with decreasing measurement temperature. The inhomogenous Schottky barrier was satisfactorily described by a Gaussian distribution with mean фBO = 1.30 eV and standard deviation σ0 = 0.002 eV. Current conduction was predominantly TE for T > 100 K and was increasingly of a thermionic-field-emission (TFE) character for T < 100 K.
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