Speaker
Apply to be<br> consider for a student <br> award (Yes / No)?
Yes
Abstract content <br> (Max 300 words)
In this study a comparison of the electrical and optical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al0.35Ga0.65N were investigated. The photodiodes were characterised as deposited and after annealing at 500 °C under an Ar ambient. The electrical and optical properties of these samples improved with annealing temperatures. The Schottky barrier heights for the Ni/Au Schottky diodes were measured as 0.913 and 1.264 eV for as deposited and 500 °C annealed diodes respectively.
The barrier heights of the Ni/Ir/Au Schottky photodiodes were found to be 2.18 eV for as deposited and 1.90 eV after 500 °C annealing. The transmission of UV radiation through the Ni/Au layer was higher than through the Ni/Ir/Au which contributed to the responsivity of the Ni/Au photodiode being higher. In general the Ni/Au photodiode produced better electrical and optical characteristics in comparison to the Ni/Ir/Au photodiode when subjected to similar annealing conditions.
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Level for award<br> (Hons, MSc, <br> PhD)?
MSc
Main supervisor (name and email)<br>and his / her institution
Dr. Walter Meyer; wmeyer@up.ac.za
University of Pretoria
