9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Study of Current-Voltage-Temperature (I-V-T) Characteristics of Palladium Schottky contacts on n-Ge (100)

10 Jul 2012, 17:30
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session


Prof. Albert Chawanda (University of Pretoria)

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Abstract content <br> &nbsp; (Max 300 words)

Current-voltage (I-V) characteristics of palladium Schottky contacts on n-Ge (100) have been measured in the 60-300 K temperature range, and analysed in terms of thermionic emission theory by incorporating the barrier inhomogeneity concept at the metal/semiconductor interface through the Gaussian distribution function. Diode electrical parameters such as ideality factor and Schottky barrier height were consequently extracted from electrical measurements. These electrical parameters indicate a very strong temperature dependence. While ideality factor n decreases, the zero bias Schottky barrier height increases with increasing temperature. The zero-bias barrier height versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of barrier heights. The temperature dependence of the barrier height for Pd/n-Ge (100) Schottky contacts depicts two Gaussian distributions. The Richardson constant and mean barrier height from the modified Richardson plot, were obtained as 0.32 Acm-2K-2 and 0.529 eV, respectively. This Richardson constant is much smaller than the reported of 50 Acm-2K-2. This deviation may be attributed to greater inhomogeneities and potential fluctuations at the contact interface.

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Primary author

Prof. Albert Chawanda (University of Pretoria)


Dr Cloud Nyamhere (University of Pretoria) Prof. Danie Auret (University of Pretoria) Dr Jackie Nel (University of Pretoria) Dr Mmantsae Diale (University of Pretoria) Mr Wilbert Mtangi (University of Pretoria)

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