9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

A new method for obtaining the mole fraction in Al<sub>x</sub>Ga<sub>1-x</sub>N epilayers

10 Jul 2012, 17:30
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session


Ms Genevéve Deyzel (Nelson Mandela Metropolitan University)

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Main supervisor (name and email)<br>and his / her institution

JAA Engelbrecht, Japie.Engelbrecht@nmmu.ac.za, NMMU

Abstract content <br> &nbsp; (Max 300 words)

The properties of thin films of AlxGa1-xN are determined by the mole fraction of aluminium. It is thus of importance to determine this mole fraction in grown films. Various techniques to determine the mole fraction have been employed in the past, and some of these will be presented. Infrared reflectance measurements at near-normal incidence were obtained of thin films of AlXGa1-XN, grown on c-plane oriented sapphire substrates by Metal Organic Chemical Vapour Deposition. A shifting of a reflectance peak at ~ 800 cm-1 was observed, apparently dependent upon the aluminium mole fraction. Results will be presented and discussed, indicating that the mole fraction of aluminium can also be established from the shift in this particular reflectance peak.

Primary author

Ms Genevéve Deyzel (Nelson Mandela Metropolitan University)


Prof. Japie Engelbrecht (NMMU)

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