Speaker
Main supervisor (name and email)<br>and his / her institution
Prof Chris Theron, University of Pretoria
chris.theron@up.ac.za
Apply to be<br> consider for a student <br> award (Yes / No)?
Yes
Level for award<br> (Hons, MSc, <br> PhD)?
PhD
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Abstract content <br> (Max 300 words)
High temperature operating Ru-SiC Schottky diodes were successfully fabricated for the first time by using electron beam deposition of ruthenium on the n-type bulk-grown 6H-SiC samples. The nickel back ohmic contact was deposited on the SiC samples by resistive evaporation technique. The Schottky diodes showed excellent rectifying behaviour up to an annealing temperature of 900 °C. The Ru-SiC Schottky diode samples were annealed isochronally in argon at temperatures ranging from 100 -1000 °C. After each annealing temperature, full IV and CV characterisation was done. The Schottky barrier height (SBH) obtained through IV characteristics, and CV characteristics increased from 0.58 eV, and 1.83 eV respectively for the as-deposited sample to 0.86 eV, and 4.12 eV for the sample annealed at 900 °C. The ideality factor and reverse saturation current ranged from 1.047, and 1.22x10-5 A respectively for the as deposited to 3.05, and 3.85x10-11 A for the sample annealed at 900 °C. The SBH obtained from IV characterisation showed some slight variation at various annealing temperatures. The Schottky diodes showed very good linear CV characteristics and excellent forward IV characteristics with a forward voltage drop of 1.5 V up to an annealing temperature of 900 °C, and then degraded after this temperature.
