Speaker
Apply to be<br> consider for a student <br> award (Yes / No)?
yes
Abstract content <br> (Max 300 words)
The solid state reactions between a Zr thin film (150nm) and a single crystalline bulk 6H-SiC substrate induced by vacuum annealing at temperatures of 600 – 800 ⁰C for durations of 30, 45 and 60 minutes, were investigated by 1.6 MeV He⁺ backscattering spectrometry, X-ray diffraction and secondary electron microscopy.
Zr was found not to react with SiC at a temperature of 600 ⁰C. The backscattered spectra were simulated using RUMP and the as-deposited spectra fit with the 600 ⁰C annealed spectra thus showing there were no reactions taking place. At higher temperatures, Zr reacts with the SiC substrate and forms a mixed layer of Zr carbide (ZrCx) and Zr silicide (Zr2Si) at annealing temperatures above 700⁰C. The formation of these phases was also confirmed by XRD.
Level for award<br> (Hons, MSc, <br> PhD)?
PhD
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
Main supervisor (name and email)<br>and his / her institution
Prof. Chris Theron