9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Solid state reaction between zirconium and silicon carbide at elevated temperatures

12 Jul 2012, 17:30
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session


Mr eric njoroge (university of pretoria)

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Abstract content <br> &nbsp; (Max 300 words)

The solid state reactions between a Zr thin film (150nm) and a single crystalline bulk 6H-SiC substrate induced by vacuum annealing at temperatures of 600 – 800 ⁰C for durations of 30, 45 and 60 minutes, were investigated by 1.6 MeV He⁺ backscattering spectrometry, X-ray diffraction and secondary electron microscopy.
Zr was found not to react with SiC at a temperature of 600 ⁰C. The backscattered spectra were simulated using RUMP and the as-deposited spectra fit with the 600 ⁰C annealed spectra thus showing there were no reactions taking place. At higher temperatures, Zr reacts with the SiC substrate and forms a mixed layer of Zr carbide (ZrCx) and Zr silicide (Zr2Si) at annealing temperatures above 700⁰C. The formation of these phases was also confirmed by XRD.

Main supervisor (name and email)<br>and his / her institution

Prof. Chris Theron

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Primary author

Mr eric njoroge (university of pretoria)

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