SAIP2012

Solid state reaction between zirconium and silicon carbide at elevated temperatures

12 Jul 2012, 17:30

2h

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session

Speaker

Mr eric njoroge (university of pretoria)

Abstract content <br> &nbsp; (Max 300 words)

The solid state reactions between a Zr thin film (150nm) and a single crystalline bulk 6H-SiC substrate induced by vacuum annealing at temperatures of 600 – 800 ⁰C for durations of 30, 45 and 60 minutes, were investigated by 1.6 MeV He⁺ backscattering spectrometry, X-ray diffraction and secondary electron microscopy.
Zr was found not to react with SiC at a temperature of 600 ⁰C. The backscattered spectra were simulated using RUMP and the as-deposited spectra fit with the 600 ⁰C annealed spectra thus showing there were no reactions taking place. At higher temperatures, Zr reacts with the SiC substrate and forms a mixed layer of Zr carbide (ZrCx) and Zr silicide (Zr2Si) at annealing temperatures above 700⁰C. The formation of these phases was also confirmed by XRD.

Main supervisor (name and email)<br>and his / her institution

Prof. Chris Theron

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

No

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

yes

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

PhD