SAIP2012

Diffusion studies of Xenon and Krypton implanted in CVD-SiC

12 Jul 2012, 17:30

2h

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session

Speaker

Dr Thulani Hlatshwayo (University of Pretoria)

Apply to be<br> consider for a student <br> &nbsp; award (Yes / No)?

no

Abstract content <br> &nbsp; (Max 300 words)

The diffusion behaviour of implanted xenon and Krypton in CVD-SiC has been investigated using Rutherford backscattering spectroscopy (RBS) and Scanning electron microscopy (SEM) techniques. Xenon (Xe+) and Krypton ions with an energy of 360 KeV were implanted in SiC to a fluence of 2 × 10¹⁶ cm^-2 at room temperature (23°C), 350°C and 600°C. Sequential annealing was performed from 1000°C to 1500°C in 100°C. By comparing the widths of the as implanted profiles to the after annealing profiles the diffusion coefficients was determined while the changes in samples surfaces were monitored by SEM.

Main supervisor (name and email)<br>and his / her institution

no

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

no

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

na