9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

AFM and SEM studies on iodine implanted 6H-SiC

12 Jul 2012, 17:30
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session


Mr Remeredzai Joseph Kuhudzai (University of Pretoria)

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Abstract content <br> &nbsp; (Max 300 words)

The study of ion beam modification of surfaces has increasingly become an integral part of characterising silicon carbide and related nuclear materials. The effect of a relatively high fluence (2 x 1017 127I+ ions) of iodine on the surface of 6H-SiC has been investigated. The contribution of vacuum annealing to the evolution of the surface morphology was also studied. Isochronal vacuum annealing was perfomed at temperetures ranging from 350 °C to 1200 °C. Atomic force microscopy (AFM) and high resolution scanning electron microscopy (FEG SEM) were employed to analyse the surface microstructure.

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Main supervisor (name and email)<br>and his / her institution

Prof JB Malherbe
University of Pretoria

Primary author

Mr Remeredzai Joseph Kuhudzai (University of Pretoria)

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