9-13 July 2012
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=11&confId=14"><font color=#ff0000>SAIP2012 PROCEEDINGS AVAILABLE</font></a>

Investigations of the Diffusion of Xenon Implanted in 6H-SiC

12 Jul 2012, 17:30
IT Building

IT Building

Poster Presentation Track A - Division for Condensed Matter Physics and Materials Poster Session


Ms Thabsile Thabethe (University of pretoria (Tuks))

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T.T Hlatshwayo

Abstract content <br> &nbsp; (Max 300 words)

The diffusion behaviour of implanted xenon in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS) and channelling techniques. Xenon (Xe+) ions with an energy of 360 KeV were implanted in SiC to a fluence of 2 × 1016 cm-2 at room temperature (23°C), 350°C and 600°C. Channelling revealed that the sample (6H-SiC) at room temperature created an amorphous layer, while at 350°C it did not cause amorphisation and the crystal structure was preserved. 5h sequential isochronal annealing was performed at temperatures ranging from 1000 to 1400°C. RBS on the annealed samples showed that no diffusion of the Xe occurred in the 350°C implanted samples. In the room temperature implanted samples there was evidence of diffusion of the xenon which only started after annealing at 1200°C. The diffusion was accompanied by a loss of xenon from the SiC surface. The difference in diffusion behaviour between the room temperature implanted and the 350°C samples suggest that the Xe diffusion in the room temperature implanted samples is due to the amorphisation of the 6H-SiC and subsequent recrystallization into a polycrystalline layer after annealing.

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Primary author

Ms Thabsile Thabethe (University of pretoria (Tuks))

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