Speaker
Mr
Shandirai Tunhuma
(University of Pretoria)
Description
A review of the progress made on characterization of defects in n-GaAs using Laplace DLTS is presented. The technique offers up to an order of magnitude higher resolution than conventional DLTS. We explored the fine structure and annealing behavior of defects which would otherwise appear as single broad based peaks in conventional DLTS. Defects induced by several processes and incident irradiation from various radionuclides are presented. The information is vital for various opto-electronic applications of Gallium arsenide especially for space applications. EL2-like defects have great potential in the field of defect engineering.
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Main supervisor (name and email)<br>and his / her institution
Jacqueline Nel Jackie.Nel@up.ac.za University of Pretoria
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Primary author
Mr
Shandirai Tunhuma
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(University of Pretoria)
Dr
Jacqueline Nel
(University of Pretoria)
Dr
Mmantsae Diale
(University of Pretoria)
