Speaker
Mr
Shandirai Tunhuma
(University of Pretoria)
Description
The current-voltage characteristics of Pd/n-4H-SiC Schottky barrier diodes in the 300-800 K temperature range have been analysed . Barrier height and ideality factor were found to be highly temperature dependent. Barrier height increases whilst ideality factor decreases with an increase in temperature and the conventional activation energy plot showed some deviation from linearity. This was attributed to barrier in-homogeneities at the metal semiconductor interface which resulted in a distribution of barrier heights at the interface. From the modified Richardson plot, the Richardson constant, A** was found to be 155 Acm^-2K^-2 in the 300-525 K range and 87 A cm^-2K^-2 in the 550-800 K temperature range.
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
Yes
Main supervisor (name and email)<br>and his / her institution
A Chawanda chawandaa@msu.ac.zw Midlands State University
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
Primary author
Mr
Elifas Gora
(Midlands state university)
Co-authors
Mr
Albert Chawanda
(University of Pretoria)
Dr
Cloud Nyamhere
(Midlands state university)
Prof.
Danie Auret
(University of Pretoria)
Ms
Helga Danga
(MSc Student)
Mr
Shandirai Tunhuma
(University of Pretoria)
