Speaker
Dr
Wilfrid Innocent Ndebeka
(Laser Research Institute, University of Stellenbosch)
Description
Optical second harmonic generation (SHG) is widely used as non-invasive technique to probe surfaces and interfaces of centrosymmetric materials, e.g. silicon/silicon dioxide (Si/SiO2) and the bulk crystal structure of non-centrosymmetric materials such as silicon carbide (SiC). The time-dependent SHG observed at the Si/SiO2 interface of a bulk Si is caused by multiphoton excitation of electrons from the Si valence band to the oxide conduction band, resulting to their slow diffusion into the oxide surface traps. An interfacial electric field gradually builds-up which enhances the generated SH by electric field induced second harmonic (EFISH) generation over several minutes. In this work, an experimental setup-up, for frequency-domain measurement of SH phase as well as the time dependent second harmonic measurements of p-doped Si, will be presented and the obtained results are shown and discussed.
Apply to be<br> considered for a student <br> award (Yes / No)?
No
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
N/A
Main supervisor (name and email)<br>and his / her institution
Erich Rohwer (egr@sun.ac.za)
Laser Research Institute, Physics Department.
Stellenbosch University
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
Primary author
Dr
Wilfrid Innocent Ndebeka
(Laser Research Institute, University of Stellenbosch)
Co-authors
Prof.
Erich Rohwer
(University of Stellenbosch)
Dr
Pieter Neethling
(Laser Research Institute, University of Stellenbosch)
