Speaker
Description
Laser-induced disordering processes have been studied
intensively during the last decades. In this work, we
present investigations of a laser induced ordering process which
consists in the controlled mobility of crystal defects. In order
to study the possibility to guide vacancies by femtosecond-
laser pulses we performed ab initio
molecular dynamics simulations of laser-excited Silicon with
different defect densities using our code CHIVES (Code for Highly
Excited Valence Electron Systems). The objective of this study is
to determine the impact of laser
excitation on defects (vacancies and impurity
atoms) migration in Silicon (Si). Starting from initially
randomly distributed defects, we simulated the ultrashort time
dynamics of the system after laser heating. As a preliminary
results we observed the changed mobility of the vacancies.
