22-30 July 2021
North-West University
Africa/Johannesburg timezone
More Information Coming Soon

The influence of thermal annealing on defects induced in Xe implanted n-type 4H-silicon carbide

30 Jul 2021, 12:15
12m
Potchefstroom Campus (North-West University)

Potchefstroom Campus

North-West University

Oral Presentation Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials

Speaker

Dr Ezekiel Omotoso (Department of Physics, University of Johannesburg)

Description

In this study, 4H-silicon carbide samples were bombarded with 167 MeV Xe ions to a fluence of 1×108 cm-2 at 300 K prior to the fabrication of Schottky contacts. The samples were also annealed at approximately 900 °C before thermal fabrication of the contacts. When compared current-voltage results with the as-grown device, generation-recombination occurred in the implanted samples. The presence of four deep level defects (0.10, 0.12, 0.16 and 0.65 eV) were observed in as-grown devices when characterized by deep level transient spectroscopy. In addition, two deep level defects with activation energies of 0.40 and 0.69 eV below the conduction band minimum were induced as a result of implantation. These two induced-defects have similar signatures to other defects observed by MeV electron irradiation. It was observed that the two defects induced were annealed out at 400 °C which indicated the instability of the defects after annealing the implanted sample.

Level for award;(Hons, MSc, PhD, N/A)?

N/A

Apply to be considered for a student ; award (Yes / No)?

No

Primary authors

Dr Ezekiel Omotoso (Department of Physics, University of Johannesburg) Walter Meyer (University of Pretoria) Danie Auret (University of Pretoria) Aletta Prinsloo (University of Johannesburg) Charles Sheppard (Department of Physics, University of Johannesburg)

Presentation Materials

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