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SUMMARY:The influence of thermal annealing on defects induced in Xe implan
 ted n-type 4H-silicon carbide
DTSTART;VALUE=DATE-TIME:20210730T101500Z
DTEND;VALUE=DATE-TIME:20210730T102700Z
DTSTAMP;VALUE=DATE-TIME:20260713T193140Z
UID:indico-contribution-7101@events.saip.org.za
DESCRIPTION:Speakers: Ezekiel Omotoso (Department of Physics\, University 
 of Johannesburg)\nIn this study\, 4H-silicon carbide samples were bombarde
 d with 167 MeV Xe ions to a fluence of 1×108 cm-2 at 300 K prior to the f
 abrication of Schottky contacts. The samples were also annealed at approxi
 mately 900 °C before thermal fabrication of the contacts. When compared c
 urrent-voltage results with the as-grown device\, generation-recombination
  occurred in the implanted samples. The presence of four deep level defect
 s (0.10\, 0.12\, 0.16 and 0.65 eV) were observed in as-grown devices when 
 characterized by deep level transient spectroscopy. In addition\, two deep
  level defects with activation energies of 0.40 and 0.69 eV below the cond
 uction band minimum were induced as a result of implantation. These two in
 duced-defects have similar signatures to other defects observed by MeV ele
 ctron irradiation. It was observed that the two defects induced were annea
 led out at 400 °C which indicated the instability of the defects after an
 nealing the implanted sample.\n\nhttps://events.saip.org.za/event/206/cont
 ributions/7101/
LOCATION:North-West University Potchefstroom Campus
URL:https://events.saip.org.za/event/206/contributions/7101/
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