Speaker
Mr
Thokozane Moses Sithole
(University of South Africa)
Description
Sithole TM and Moloi SJ
University of South Africa, Department of Physics, P.O. Box 392, Pretoria 0003,
South Africa.
Email: sthokozanemoses@gmail.com
Abstract: The aim of this paper is to improve the radiation-hardness of silicon diodes. The schottky diodes were fabricated on undoped and gadolinium doped p-type silicon. The electrical properties of the diodes were studied using the current-voltage (I-V) and capacitance-voltage (C-V) techniques. The results show that the silicon diodes have become relaxation-like after doping hence the device shows Ohmic behaviour. This is in concurrence with the presence of the ‘midgap defect’ in gold and platinum doped devices from literature [1-4]. Erbium and niobium doped silicon have been found to have similar results as gold and platinum. Relaxation material is radiation-hard since the effects of radiation on the device are suppressed. From the preliminary results gadolinium doped silicon shows Ohmic behaviour which has been found to enhance the performance of the diodes in radiation-hard particle detectors.
Keywords: Silicon, gadolinium doped diodes, I-V and C-V, radiation-hard.
References:
[1] Kwon Y K, Ishikawa T and Kuwano H J. Appl. Phys. 1987; 61 1055.
[2] Msimanga M, McPherson M and Theron C Radiation Physics and Chemistry 2004; 71 733.
[3] McPherson M, Sloan T and Jones B K J. Phys. D: Appl. Phys. 1997; 30 3028.
[4] Moloi S J and McPherson M Physica B 2009; 404 3922.
Apply to be<br> considered for a student <br> award (Yes / No)?
yes
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Primary author
Mr
Thokozane Moses Sithole
(University of South Africa)
Co-author
Mr
Sabata Moloi
(University of South Africa)
