Speaker
Ms
Mamogo Masenya
(iThemba LABS/University of the Western Cape)
Description
Silicon Carbide (SiC) nanostructures are well known for their superior mechanical properties, high thermal conductivity, low thermal-expansion coefficient, good thermal-shock resistance, chemical stability, and electron affinity which make them excellent candidates for work in harsh environments [1]. Silicon carbide nanoparticles were grown via thermal annealing of electron-beam deposited SiC/Pd thin films on crystalline silicon (c-Si) substrate in vacuum at 800 0C. Scanning electron microscopy (SEM) analysis of the as-deposited samples showed a uniform surface with small grains while annealed films showed formation of islands that grew larger as SiC thickness increased. Rutherford Backscattering Spectrometry (RBS) and Energy-dispersive X-ray Spectroscopy (EDX) confirmed the presence of Pd, Si, C and O on the nano-islands. Fourier Transform Infrared Spectroscopy (FTIR) confirmed the 3C-SiC polytype.
Apply to be<br> considered for a student <br> award (Yes / No)?
No
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
PhD
Primary author
Ms
Mamogo Masenya
(iThemba LABS/University of the Western Cape)
Co-authors
Dr
Christopher Mtshali
(iThemba LABS, Materials Research Department)
Dr
Franscious Cummings
(University of the Western Cape)
Dr
Morgan Madhuku
(iThemba LABS, Tandem and Accelerator Mass Spectrometry Department)
Dr
Sylvain Halindintwali
(University of the Western Cape)
