Speaker
Mr
NDITSHENI NEKHWEVHA
(student)
Description
SnO2 semiconductor cannot proficiently produce UV light because of the large band gap which has ruined its potential optoelectronic application. Doping tin dioxide with different metals components has been considered as a promising method to reduce the band gap of SnO2 so it can improve light effectively in the visible and close infrared region. The electronic and optical properties of undoped and doped structure of SnO2 were investigated Using first principles calculations based on density functional theory (DFT) within the local density approximation (LDA).The different functionals were used to calculate the properties of doped and undoped structure tin dioxide and compare their results. Our results present an important advancement toward controlling the band structure and showing that doped SnO2 can absorb photons on the ultra –violet region and towards near infrared region which is a redshift.
Apply to be<br> considered for a student <br> award (Yes / No)?
YES
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
Msc
Primary author
Mr
NDITSHENI NEKHWEVHA
(student)
Co-authors
Dr
Nnditshedzeni Eric Maluta
(University of Venda)
Dr
Rapela Maphanga
(CSIR)
Mr
Tshifhiwa Steven Ranwaha
(University of Venda)
