8-12 July 2019
Polokwane
Africa/Johannesburg timezone
Deadline for papers for the conference proceedings is 15 August 2019

STABILITY OF EXCITONIC STATES IN AN EXTRINSEC SEMICONDUCTOR USING FEYNMAN PATH INTEGRALS

10 Jul 2019, 16:40
20m
Protea The Ranch Hotel (Polokwane)

Protea The Ranch Hotel

Polokwane

Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials

Speaker

Mrs FOBASSO M F C (UNIVERSITY OF DSCHANG)

Description

We investigate the stability of excitonic states, which are pairs of fermionic particles, by using Feynman Path Integrals methods and Grassman algebra that best describes fermions. The system is decoupled using Berezin integral. Working in the reciprocal space allow us to write the total action functional express in terms of interacting and non-interacting Green functions. This action functional also reveals the fluctuations arriving during the displacement of the exciton in semiconductor. The Bethe Salpeter equation applied help to establish the parametrs like polarization, total energy and density of states. The binding energy is found to be large compare to the electron-hole unbound energy ending to the stability of the particle. The obtained parameters strongly depends on the impurity alowing one to predict about the future of the particle in presence of fluctuations. All these results are confirmed by the diagrams sketched and that could be a predictive experimental study on the excitonic states. It is demonstrated that the Feynman diagrams obtained are in accordance with the analytical results and reveal the fact that the system contains more fluctuations that can predict its stability. This work is a good understanding in donors impurities for transport applications of a doped semiconductor.

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

PhD

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

Yes

Primary author

Mrs FOBASSO M F C (UNIVERSITY OF DSCHANG)

Co-authors

Dr ATEUAFACK E M (UNIVERSITY OF DSCHANG) Prof. FAI L C (UNIVERSITY OF DSCHANG) Prof. FOTUE A J (UNIVERSITY OF DSCHANG) Dr KENFACK S C (UNIVERSITY OF DSCHANG) Mr PONE B V K (UNIVERSITY OF DSCHANG)

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