Speaker
Dr
Mpho Sithole
(Sefako Makgatho Health Sciences University)
Description
Schottky barrier diodes (SBDs) are a basic structure for semiconductor characterization. Aluminium (Al) SBDs were fabricated on Te-doped n-type Gallium Antimonide (GaSb) using electron beam deposition system. The electrical transport properties of Al/n-GaSb semiconductor material have been investigated. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al/n-GaSb Schottky diodes have been measured over a temperature range of 100-380 K in 20 K steps. The Schottky diode showed a temperature dependence of ideality factor (n) from 1.07 to 1.28, with a room temperature value of 1.22. The barrier height (ϕB) was found to decrease from 0.65 eV at 380 K to 0.35 eV at 100 K. It was found that room temperature barrier heights were equal to 0.57 eV and 0.60 eV determined using I-V and C-V measurements, respectively. It was observed that the leakage current at -1.0 V increased in the range of 3.82 × 10-7 to 5.41 × 10-4 A. The results showed a typical diode behavior of Al/n-GaSb Schottky diode. The barrier height decreased while the ideality factor increased with a decrease in temperature.
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Primary author
Dr
Mpho Sithole
(Sefako Makgatho Health Sciences University)
