25-29 June 2018
Africa/Johannesburg timezone
General information and Registration for SAIP2018 is handled by Eastern Sun Events at: http://www.saipconference.co.za/ <p> Deadline for papers for the conference proceedings is 28 July 2018

Characterization of aluminium Schottky junction diode fabricated on nickel oxide thin film synthesized through sol-gel method

28 Jun 2018, 15:00
2h
Poster Presentation Track A - Physics of Condensed Matter and Materials Poster Session 2

Speaker

Mr Shadrach Akinkuade (University of Pretoria)

Description

Nickel oxide (NiO) thin films were deposited on glass substrates through the sol-gel spin coating technique. Structural, optical and electrical characteristics of the films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Uv-vis spectrophotometery and linear four point probe resistivity measurement. The films were found to be polycrystalline, uniform, conducting and transparent. NiO film was also deposited on p-type silicon substrates and aluminium contacts of 0.6 mm diameter were deposited on the film to form an Al/NiO/p-Si structure. Indium-gallium was used as ohmic contact on the silicon and current-voltage characteristics of the Al/NiO schottky junction were investigated. The junction showed good rectification and the parameters of the junction were determined.

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Jacqueline Nel (jackie.nel@up.ac.za), Walter Meyer (wmeyer@up.ac.za) Physics Department, University of Pretoria, Pretoria 0002, South Africa

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Primary author

Mr Shadrach Akinkuade (University of Pretoria)

Co-authors

Dr Jacqueline Nel (University of Pretoria) Dr Walter Meyer (University of Pretoria)

Presentation Materials

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