Speaker
Mr
Valentine Gora
(Mdlands State University)
Description
Schottky barrier diodes (SBDs) made on 4H-SiC have been commercially available for a considerable time but their properties and applications are still not thoroughly understood. Consistent control of metal contact properties is yet to be established so as to optimize reliability. As a result, the inability to physically reproduce the Schottky barrier height is a technologically important concern which is continuously being researched. The current voltage (I-V) characteristics of Pd/n-type 4H-SiC Schottky barrier diode in the 300-800 K temperature range have been analysed. Barrier height and ideality factor were found to be strongly temperature dependent. Barrier height was observed to increase whilst ideality factor decreased with an increase in temperature and the conventional activation energy plot showed some deviation from linearity. This was attributed to barrier inhomogeneities at the metal-semiconductor interface which resulted in a distribution of barrier heights at the interface. From the modified Richardson plot, the Richardson constant, A** was found to be 155 A cm-2K-2 and 87 A cm-2K-2 in the 300-525 K and the 550-800 K temperature ranges respectively.
Supervisor details<br><b>If not a student, type N/A.</b><br>Student abstract submision<br>requires supervisor permission:<br>please give their name,<br> institution and email address.
C Nyamhere, midlands state university, nyamherec@staff.msu.ac.zw
| Please confirm that you<br>have carefully read the<br>abstract submission instructions<br>under the menu item<br>"Call for Abstracts"<br><b>(Yes / No)</b> | Yes |
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| Consideration for<br>student awards<br><b>Choose one option<br>from those below.</b><br>N/A<br>Hons<br>MSc<br>PhD | N/A |
Primary author
Mr
Valentine Gora
(Mdlands State University)
Co-authors
Dr
Cloud Nyamhere
(Midlands state university)
Prof.
Danie Auret
(University of Pretoria)
Mr
Shandirai Tunhuma
(University of Pretoria)
