63^rd ANNUAL CONFERENCE OF THE SA INSTITUTE OF PHYSICS

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

28 Jun 2018, 15:00

2h

Poster Presentation Track A - Physics of Condensed Matter and Materials Poster Session 2

Speaker

Dr Emmanuel Igumbor (University of Pretoria)

Description

Electrically active induced energy levels in semiconductor devices could be beneficial to the discovery of an enhanced p or n-type semiconductor. N implanted into 4H-SiC is a high energy process that produced high defect concentrations which could be removed during dopant activation annealing. On the other hand, B substituted for silicon in SiC leads to a decrease in the dielectric properties and induced deep donor and shallow acceptor levels. Complexes formed by the N, such as the nitrogen-vacancy centre, have been reported to play a significant role in the application of quantum bits. The results of charge states thermodynamic transition level of the N and B vacancy-complexes in 4H-SiC are presented. The energies of formation of the N related vacancy-complexes shown the N_CV_C to be energetically stable close to the valence band maximum in its double positive charge state. The N_CV_Si is more energetically stable in the double negative charge state close to the conduction band minimum. The N_Si V_C on the other hand, induced double donor level and the N_CV_Si induced a double acceptor level. For B related complexes, the B_CV_C and B_SiV_C were energetically stable in their single positive charge state closed to the valence band maximum. As the Fermi energy is varied across the band gap, the neutral and single negative charge states of the B_SiV_C become more stable at different energy levels. B and N related complexes exhibited charge state controlled metastability behaviour.

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