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Abstract
A small amount of Mo as alloying element with Ni thin film on Si(100) substrate can greatly enhanced the thermal stability of nickel monosilicide formed by rapid thermal annealing (RTA). The study was carried out using X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectrometry (RBS), Scanning Electronic Microscopy (SEM), Energy Dispersive X-ray (EDX) and four probe sheet Resistance (Rs). One possible reason for the enhanced NiSi thermal stability is attributed to the presence of Mo alloying element at the grain boundaries and interfaces of NiSi film, leading to the increase in the interfacial energy change. The increase of the activation energy for the NiSi2 nucleation and the thermal stability of NiSi compound are studied.
Keywords: alloying elements, NiSi stability, XRD, Raman spectroscopy, RBS, SEM, EDX, Rs.
