Speaker
Mr
Ezekiel Omotoso
(University of Pretoria)
Description
We have investigated the effect of 251-Am alpha-particle irradiation of energy 5.4 MeV on 1.9 × 10^(16) cm^(–3) N-doped 4H-SiC SBDs at different fluences. Prior to bombardment, we observed four defects with energies 0.10, 0.12, 0.16 and 0.65 eV below the conduction band. Alpha-particle irradiation introduced one additional defect with a very broad peak after receiving a 2.8 × 10^11 cm^(–2) fluence, and the peak became conspicuous after several irradiations. The signature in term of energy and apparent capture cross section was estimated to be 0.37 eV and 5.5 × 10^(–16) cm^2, respectively. The introduction rate of this defect was determined to be 6500 cm^(–1).
Are you currently a postgraduate student? (Yes/No)
Yes
Please provide the name and email address of your supervisor.
Prof. Walter E. Meyer; wmeyer@up.ac.za
At what level of studies are you currently? (Hons/MSc/PhD)
PhD
Primary author
Mr
Ezekiel Omotoso
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(University of Pretoria)
Dr
Mmantsae Diale
(University of Pretoria)
Mr
Phuti Ngoepe
(University of Pretoria)
Dr
Sergio Coelho
(University of Pretoria)
Dr
Walter Meyer
(University of Pretoria)
