Speaker
Prof.
Erik Janzen
(Semiconductor Materials (IFM), Linkoping University)
Description
SiC has during the last few years become increasingly important as a power-device material for high voltages. The thick low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4˚ off-cut 4H-SiC substrates at a growth rate of 5-10 µm/h using silane and propane (or ethylene) as precursors. The concentrations of epitaxial defects and dislocations depend to a large extent on the underlying substrate but can also be influenced by the actual epitaxial growth process. Here we will present a study on the properties of the epitaxial layers grown by a Cl-based technique on an a-axis (90˚ off-cut from the c direction) 4H-SiC substrate
Are you currently a postgraduate student? (Yes/No)
No
Primary author
Prof.
Erik Janzen
(Semiconductor Materials (IFM), Linkoping University)
Co-authors
Mr
Ian Booker
(Semiconductor Materials (IFM), Linkoping University)
Dr
Ildiko Farkas
(Semiconductor Materials (IFM), Linkoping University)
Dr
Ivan Ivanov
(Semiconductor Materials (IFM), Linkoping University)
Dr
Jawad Hassan
(Semiconductor Materials (IFM), Linkoping University)
