Speaker
Mr
Ezekiel Omotoso
(University of Pretoria)
Description
The effect of low-temperature alpha-particle irradiation on Pd/4H-SiC Schottky barrier diodes has been investigated. The motivation is to study the radiation damage of the sample after bombarded with 1.6 MeV a-particles [(He)^(2+)] at 20 K and the annealing of the radiation-induced defects taking place with increasing in temperature. The of fluence alpha-particles amounted to 3 × (10)^(13) (cm)^(–2). Thermal admittance and photo-capacitance spectroscopy were employed to characterize the diodes. The shallow donors D1 and D2 were detected in the as-grown as well as in the a-bombarded samples. The defects TαAnn was stable to both irradiation and annealing at room temperature.
At what level of studies are you currently? (Hons/MSc/PhD)
PhD
Are you currently a postgraduate student? (Yes/No)
Yes
Please provide the name and email address of your supervisor.
Prof. Walter E. Meyer
Primary author
Mr
Ezekiel Omotoso
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(University of Pretoria)
Mr
Johan Janse van Rensburg
(University of Pretoria)
Dr
Matthias Schmidt
(University of Pretoria)
Dr
Walter Meyer
(University of Pretoria)
