Speaker
Mr
Ezekiel Omotoso
(University of Pretoria)
Description
The effect of low-temperature alpha-particle irradiation on Pd/4H-SiC Schottky barrier diodes has been investigated. The motivation is to study the radiation damage of the sample after bombarded with 1.6 MeV a-particles [(He)^(2+)] at 20 K and the annealing of the radiation-induced defects taking place with increasing in temperature. The of fluence alpha-particles amounted to 3 × (10)^(13) (cm)^(–2). Thermal admittance and photo-capacitance spectroscopy were employed to characterize the diodes. The shallow donors D1 and D2 were detected in the as-grown as well as in the a-bombarded samples. The defects TαAnn was stable to both irradiation and annealing at room temperature.
Please provide the name and email address of your supervisor.
Prof. Walter E. Meyer
Are you currently a postgraduate student? (Yes/No)
Yes
At what level of studies are you currently? (Hons/MSc/PhD)
PhD
Primary author
Mr
Ezekiel Omotoso
(University of Pretoria)
Co-authors
Prof.
Danie Auret
(University of Pretoria)
Mr
Johan Janse van Rensburg
(University of Pretoria)
Dr
Matthias Schmidt
(University of Pretoria)
Dr
Walter Meyer
(University of Pretoria)
