SAIP2014

Microstructure evolution of rutheniumwith 6H-SiC interface under vacuum annealing and the implications for the performance of its Schottky contact for high temperature operating diodes.

8 Jul 2014, 15:20

20m

D Les 103

Oral Presentation Track F - Applied Physics Applied

Speaker

Mr Kinnock Vundawaka Munthali (University of Namibia)

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800C,while diffusion of Ru into 6H-SiC commenced at 800C. Raman analysis of the thin films annealed at 1000C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

Yes

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

Yes

Main supervisor (name and email)<br>and his / her institution

Prof. Chris Theron,Department of Physics, University of Pretoria, Email: chris.theron@up.ac.za

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD)?

PhD