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SUMMARY:Microstructure evolution of rutheniumwith 6H-SiC interface under v
 acuum annealing and the implications for  the performance of its Schottky 
 contact for high temperature operating diodes.
DTSTART;VALUE=DATE-TIME:20140708T132000Z
DTEND;VALUE=DATE-TIME:20140708T134000Z
DTSTAMP;VALUE=DATE-TIME:20260813T211948Z
UID:indico-contribution-3627@events.saip.org.za
DESCRIPTION:Speakers: Kinnock Vundawaka Munthali (University of Namibia)\n
 https://events.saip.org.za/event/34/contributions/3627/
LOCATION: D Les 103
URL:https://events.saip.org.za/event/34/contributions/3627/
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