7-11 July 2014
Africa/Johannesburg timezone
<a href="http://events.saip.org.za/internalPage.py?pageId=16&confId=34"><font color=#0000ff>SAIP2014 Proceedings published on 17 April 2015</font></a>

Influence of argon-implantation on thermoluminescence of synthetic quartz

9 Jul 2014, 17:10
1h 50m
D Ring ground level

D Ring ground level

Board: A.134
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster2


Dr Schadrack Nsengiyumva (Rhodes University)

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

Thermoluminescence of single crystalline synthetic quartz samples exposed to beta irradiation subsequent to implantation with 70 keV Ar ions at fluences ranging between 1x1014 and 5x1015 ions/cm2 is reported in this study. The glow curves, recorded with a linear heating rate of 5 oC/s, show a prominent main peak at a temperature in the range 112-136 oC. However for the sample implanted at the highest fluence, a secondary peak emerges at about 400 oC. Furthermore it was found that all implanted samples enhance the thermoluminescence emission with respect to the unimplanted sample. This enhancement can be attributed to an increase in the concentration of defects which act as electron traps or recombination centres. Kinetic analysis of the thermoluminescence was carried out using a variety of methods including the whole curve, peak shape and glow curve deconvolution methods. Kinetic parameters, i.e., activation energy (E), frequency factor (s), and order of kinetics (b) were evaluated and found to be comparable through the different analytical methods used. This observation indicates that the change in implantation fluence does not necessarily affect the nature of the electron trapping centres.

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Primary author

Dr Schadrack Nsengiyumva (Rhodes University)


Prof. Makaiko Chithambo (Rhodes University)

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