Main supervisor (name and email)<br>and his / her institution
Prof. J.R. Botha, Reinhardt.Botha@nmmu.ac.za, NMMU
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Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
ZnO nanorods have been synthesized on moderately doped (p) and heavily doped (p+) silicon by a two-step chemical bath deposition process. Current-voltage (I-V) measurements reveal that the electrical behaviour of the heterojunction depends on the dopant density of the silicon. Although post growth annealing improves the photoluminescent properties, the best electrical properties (I-V) are obtained for the as-grown sample. Indeed, the I-V characteristics of the sample grown on p+ substrate clearly show ohmic behaviour. In contrast the sample grown on (p) substrate is rectifying. Rectification ratios (± 3 V) of ~ 280 and ~30 were measured for the as-grown and annealed (300°C) samples, respectively, indicating that annealing negatively affected the electrical properties of the junction. The effect of dopant density and annealing temperature on the optical and electrical properties of the heterojunction is discussed in detail.
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