3-7 July 2023
University of Zululand
Africa/Johannesburg timezone
The Proceedings of SAIP2023 Published: 20 December 2023

Using the sf-model to describe spintronic devices

6 Jul 2023, 10:20
20m
University of Zululand

University of Zululand

Oral Presentation Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials Track 1

Speaker

Dr Volkmar Nolting (Vaal University of Technology)

Description

Crystals containing rare earth atoms are interesting candidates for spintronic devices due to the fact that magnetism and the electric current are caused by different electron groups. The exactly solvable zero bandwidth limit of the sf-model is used to calculate the conduction electron spin polarization P(T,n), the chemical potential $\mu(T,n)$ and the 4f-magnetization m(T,n). The results confirm the existence of spin dependent electron transport properties in these materials. As an application to 4f-antiferromagnetism the alloy series $CeNi_{1-x}Co_{x}Ge_{2}$ is investigated. It is shown that the susceptibility X(T) displays a peak at the Neel temperature $T_{N}$ thereby indicating a transition into the paramagnetic phase. A numerical evaluation yields results in qualitative agreement with those of other authors.

Level for award;(Hons, MSc, PhD, N/A)?

N/A

Apply to be considered for a student ; award (Yes / No)? No

Primary author

Dr Volkmar Nolting (Vaal University of Technology)

Presentation Materials

Peer reviewing

Paper