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In this study, copper zinc tin sulphide (CZTS) and copper zinc tin sulphur selenide (CZTSSe) thin films were deposited on molybdenum (Mo), indium tin oxide (ITO) and fluorine-doped tin oxide (FTO) by sputtering deposition and were annealed in nitrogen at 500°C for 60 minutes. The XRD patterns on all substrates showed tetragonal kesterite CZTS with I4 ̅ space group and tetragonal kesterite CZTSSe with I4 space group. Raman spectra further confirmed CZTS and CZTSSe. Dominant peaks showing red shifts from 337.2cm-1 for Mo/CZTS to 335.8 and 329.8cm-1 for FTO/CZTS and ITO/CZTS, respectively. Similarly, red shifts were observed for Mo/CZTSSe from 334.3 cm-1 to 331.4 and 322.5 cm-1 for FTO/CZTSSe and ITO/CZTSSe, respectively. The presence of copper tin sulphide (CTS) and zinc sulphide (ZnS) residue on CZTSSe were also revealed by the Raman. UV-Vis analysis depicted the bandgaps of ITO/CZTS, ITO/CZTSSe, FTO/CZTSSe to be 1.26, 1.16 and 1.35 eV, respectively. The sheet resistance, resistivity and conductivity of the thin films was measured using a four point probe. The smallest value resistivity of 2.095 ×〖10〗^(-6)Ω.m was obtained on Mo/CZTSSe while ITO/CZTS had the largest value (115.2 ×〖10〗^(-3)Ω.m). These findings shed light on the structural, optical and electrical properties of ITO/CZTS, ITO/CZTSSe, FTO/CZTS, FTO/CZTSSe as possible bottom layers of tandem solar cells.
Keywords: CZTS, CZTSSe, FTO, ITO, sputtering deposition, solar cell.
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MSc
