SAIP2021

High-resolution deep level transient spectroscopy (DLTS) study of vacancy defects donor pairs in P-, AS- and Sb-doped n-type Silicon

Not scheduled

20m

Potchefstroom Campus (North-West University)

Poster Presentation Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials

Speaker

Mr Asil Alnaim (university of Pretoria)

Description

We have used conventional deep-level transient spectroscopy (DLTS) and high resolution Laplace deep level transient spectroscopy (L-DLTS) to investigate electron-irradiation induced defects in phosphorous doped (n-type) silicon implanted additionally with arsenic, antimony and both arsenic and antimony. All samples exhibited similar DLTS spectra, with peaks at 219 K, 166 K, 128 K, and 92 K. These defects were attributed to the E-center, divacancy, hydrogen-oxygen vacancy and Oxygen-vacancy, observed at rate window of 80 s-1. The E-center appears in all the spectra. The activation energies of the defects were extracted from Arrhenius plot measurements. The calculated activation energies were found to be 0.444, 0.432, 0.389 eV for P-As, P-Sb, P-Sb-As, respectively.

Apply to be considered for a student ; award (Yes / No)?

yes

Level for award;(Hons, MSc, PhD, N/A)?

PhD

Presentation Materials

219-Alnaim-Study of the electrical properties of vacancy-oxygen-hydrogen defect in Au-n-Si Schottky diodes characterized.pdf